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AUIRFR3504TRL

AUIRFR3504TRL N-Channel 40V 56A DPAK MOSFET, AEC-Q101

MPNAUIRFR3504TRL
Active

Infineon HEXFET® series, N-Channel MOSFET, AUIRFR3504TRL, 40 V, 56 A, 9.2 mOhm, DPAK, AEC-Q101.

$0.84Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR3504TRL specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power140.0
Package_typeBulk
Capacitance_uf0.0022
StatusActive
Supply voltage40.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current56.0
Rds on (Max) @ id, vgs9.2mOhm @ 30 A, 10 V
Gate charge (Qg) (Max) @ vgs71 nC @ 10 V

Product details

The AUIRFR3504TRL: Maximum gate-source voltage is ±20 V, so the gate oxide has headroom for ringing on long PCB traces without immediate failure, though a series gate resistor is still good practice.

Thermal envelope for under-hood duty

Junction temperature range spans -55°C to 175°C, which covers the full automotive under-hood band including cold-crank and hot-soak conditions — the 175°C ceiling gives margin over the typical 150°C limit of many automotive MOSFETs. Rated for 140 W maximum power dissipation; the actual continuous current in a 85°C under-hood ambient will be derated from the 56 A headline figure by the RthJA of the DPAK footprint on the PCB copper area.

Frequently asked questions

What is the Rds(on) of the AUIRFR3504TRL and at what test condition?

The maximum on-resistance is 9.2 mOhm measured at a drain current of 30 A and a gate-source voltage of 10 V.