55 V, 42 A N-channel in DPAK — AEC-Q101 on the label
The Infineon AUIRFR2905ZTR is a 55 V, 42 A N-channel MOSFET in the DPAK surface-mount package, part of the HEXFET® series with AEC-Q101 automotive qualification.
Rds(on) is specified at 14.5 mOhm maximum with 36 A drain current and 10 V gate drive — the actual on-resistance rises with junction temperature, so budget headroom above 25 °C. Gate charge Qg totals 44 nC at 10 V; at a 100 kHz switching frequency the gate driver sees about 4.4 mA average current, well within a standard driver's capability. The ±20 V maximum gate-source rating gives margin for gate-drive overshoot in hard-switched topologies, common in automotive DC-DC converters and motor pre-drive stages.
The 175°C TJ(max) is above the 150°C typical for many industrial MOSFETs, so the thermal margin helps when the DPAK is soldered to a minimal copper area.
Active lifecycle — no near-term EOL concern
Listed as Active with no last-time-buy or NRND notice. The AEC-Q101 qualification and HEXFET® pedigree mean Infineon keeps this part in production for the automotive aftermarket and tier-1 production schedules.