Skip to main content
AUIRFR2905ZTR

AUIRFR2905ZTR N-Channel MOSFET, 55V 42A DPAK, AEC-Q101

MPNAUIRFR2905ZTR
Active

Infineon HEXFET® AUIRFR2905ZTR, N-channel MOSFET, 55 V, 42 A, 14.5 mOhm Rds(on) at 10 V, DPAK, AEC-Q101, -55 to 175 °C junction.

$0.96Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFR2905ZTR specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeN-Channel
MountingSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power110.0
Package_typeBulk
Capacitance_uf0.0014
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current42.0
Rds on (Max) @ id, vgs14.5mOhm @ 36 A, 10 V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V

Product details

55 V, 42 A N-channel in DPAK — AEC-Q101 on the label

The Infineon AUIRFR2905ZTR is a 55 V, 42 A N-channel MOSFET in the DPAK surface-mount package, part of the HEXFET® series with AEC-Q101 automotive qualification.

Rds(on) is specified at 14.5 mOhm maximum with 36 A drain current and 10 V gate drive — the actual on-resistance rises with junction temperature, so budget headroom above 25 °C. Gate charge Qg totals 44 nC at 10 V; at a 100 kHz switching frequency the gate driver sees about 4.4 mA average current, well within a standard driver's capability.

The 175°C TJ(max) is above the 150°C typical for many industrial MOSFETs, so the thermal margin helps when the DPAK is soldered to a minimal copper area.

Listed as Active with no last-time-buy or NRND notice. The AEC-Q101 qualification and HEXFET® pedigree mean Infineon keeps this part in production for the automotive aftermarket and tier-1 production schedules.

Frequently asked questions

Is AUIRFR2905ZTR automotive grade?

Yes, the AUIRFR2905ZTR carries AEC-Q101 qualification, making it suitable for automotive under-hood and chassis-domain applications where the part sees -55°C to 175°C junction temperature.

What is the Rds(on) of AUIRFR2905ZTR?

Maximum Rds(on) is 14.5 mOhm at 36 A drain current with 10 V gate drive. This is the conduction loss spec; derate for higher junction temperature per the normalised curve in the datasheet.

What is the gate charge of AUIRFR2905ZTR?

Total gate charge Qg is 44 nC at 10 V gate-source voltage. This determines the gate-drive power needed for a given switching frequency — at 100 kHz the average gate current is roughly 4.4 mA.