Infineon HEXFET® N-Channel MOSFET, AUIRFR2405TRL, 55 V, 30 A, 16 mOhm Rds(on), 110 W, D-Pak (TO-252AA), Surface Mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 175°C(TJ) |
| Power | 110.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0024 |
| Status | Active |
| Supply voltage | 55.0 |
| Vgs(Th) (Max) @ id | 4 V @ 250µA |
| Switching current | 30.0 |
| Rds on (Max) @ id, vgs | 16mOhm @ 34 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
The AUIRFR2405TRL is an N-channel HEXFET power MOSFET in a D-Pak (TO-252AA) surface-mount package, rated for 55 V drain-source breakdown and 30 A continuous drain current.
Total gate charge is 110 nC at 10 V — the driver must supply this charge per switching cycle, so the switching frequency and drive current budget are linked.