HEXFET N-channel in a DPAK — 100 V, 8.7 A switching
The Infineon AUIRFR120Z is a 100 V, 8.7 A N-channel HEXFET MOSFET in the DPAK (TO-252) surface-mount package. It is designed for high-efficiency power switching in applications such as DC-DC converters, motor drives, and load switches where board space is tight.
This gives a conduction loss of about 1.0 W at 5.2 A — well within the 35 W package power dissipation limit when the junction stays under 175°C. Total gate charge is 10 nC at 10 V, so a gate driver delivering 1 A can switch this FET in roughly 10 ns. The low Qg keeps gate-drive losses small even at switching frequencies above 100 kHz.
Temperature range and ruggedness
The 4 V maximum threshold voltage at 25 µA ensures the device turns on cleanly with 5 V logic-level gate drives.
