Gate charge and input capacitance — driver selection matters
A weak driver will stretch switching edges and increase dissipation. Plan for a dedicated driver IC, not a microcontroller pin.
AUIRFP4568-E
Infineon Technologies · HEXFET® Series
Infineon HEXFET® N-Channel MOSFET, AUIRFP4568-E, 150 V drain-source, 171 A continuous drain, 5.9 mOhm Rds(on) at 10 V, TO-247AD through-hole, -55°C to 175°C.
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 171A (Tc) |
| Power dissipation | 517W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 5.9mOhm @ 103A, 10V |
| Gate charge (Qg) (Max) @ vgs | 227 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10470 pF @ 50 V |
Technical details
AUIRFP4568-E
[ALLOC] verified