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Infineon Technologies AUIRFP4568-E

Infineon AUIRFP4568-E N-Channel HEXFET MOSFET, 150V 171A

MPNAUIRFP4568-E
End of Life

Infineon HEXFET® N-Channel MOSFET, AUIRFP4568-E, 150 V drain-source, 171 A continuous drain, 5.9 mOhm Rds(on) at 10 V, TO-247AD through-hole, -55°C to 175°C.

$11.0Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AUIRFP4568-E specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C171A (Tc)
Power dissipation517W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs5.9mOhm @ 103A, 10V
Gate charge (Qg) (Max) @ vgs227 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10470 pF @ 50 V

Product details

Gate charge and input capacitance — driver selection matters

A weak driver will stretch switching edges and increase dissipation. Plan for a dedicated driver IC, not a microcontroller pin.

Temperature range — rated for the tough spots

Frequently asked questions

What is the Rds(on) of AUIRFP4568-E?

Maximum on-resistance is 5.9 mOhm at 103 A drain current with 10 V gate drive.

Is AUIRFP4568-E RoHS compliant?

Yes, it is ROHS3 compliant.

What is the replacement for AUIRFP4568-E?

No direct replacement is listed. The IPD50R950CEAUMA1 is a 500 V, 4.3 A CoolMOS part in a different package and current class — not a functional substitute.