Infineon HEXFET® AUIRFB8407, N-Channel MOSFET, 40V Vdss, 195A continuous drain, 2 mOhm Rds(on) at 10V, TO-220AB through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 225 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7330 pF @ 25 V |
The Infineon AUIRFB8407 is an N-channel HEXFET® power MOSFET rated for 40 V drain-source breakdown and 195 A continuous drain current at 25 °C case temperature, housed in a TO-220AB through-hole package.
There is no last-time-buy or end-of-life notice on record.
The AUIRFB8407 is the automotive-qualified variant of the IRFB8407, sharing the same 40 V, 195 A, 2 mOhm ratings and TO-220AB package. The AUIRFB8407 carries additional AEC-Q101 qualification and extended temperature range suitable for under-hood automotive environments, while the IRFB8407 is the industrial-grade version. For non-automotive designs, either may be used; for automotive BOMs, the AUIRFB8407 is the specified part.