40 V, 195 A, 2 mOhm — the low-voltage high-current switch for 12 V / 24 V rails
The Infineon AUIRFB8407 is an N-channel HEXFET® power MOSFET rated for 40 V drain-source breakdown and 195 A continuous drain current at 25 °C case temperature, housed in a TO-220AB through-hole package.
225 nC gate charge — what it means for the gate-drive budget
A 225 nC total gate charge at 10 V is high by modern trench-FET standards. It means the gate driver must supply enough peak current to charge and discharge the gate capacitance within the desired switching interval.
Active lifecycle, no LTB watch
The AUIRFB8407 carries an Active product status with ROHS3 compliance. There is no last-time-buy or end-of-life notice on record.
