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Infineon Technologies AUIRFB4410-IR — Discrete Semiconductors

AUIRFB4410-IR N-Channel MOSFET, 100V, 75A, AEC-Q101

MPNAUIRFB4410-IR
Active

Infineon AUIRFB4410-IR Automotive HEXFET N-Channel MOSFET, 100 V, 75 A, 10 mOhm Rds(on), TO-220, Through Hole, Bulk.

$1.33Ref. price · indicative, final on quote
Infineon Technologies AUIRFB4410-IR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRFB4410-IR specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power200.0
Package_typeBulk
Capacitance_uf0.0052
StatusActive
Supply voltage100.0
Vgs(Th) (Max) @ id4 V @ 1.037mA
Switching current75.0
Rds on (Max) @ id, vgs10mOhm @ 58 A, 10 V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V

Product details

Automotive-grade N-channel power switch

The AUIRFB4410-IR: The junction temperature range spans -55°C to 175°C, covering under-hood and engine-bay thermal profiles.

Parametric fit for high-current switching

Gate drive is straightforward: the ±20 V Vgs rating gives margin above the typical 10 V drive used to fully enhance the channel. The 180 nC Qg means a driver sourcing 1 A can switch the gate in about 180 ns; for 100 kHz hard-switching, the gate drive loss is manageable but should be factored into the thermal budget.