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Infineon Technologies AUIRF9Z34N-INF — Discrete Semiconductors

AUIRF9Z34N-INF P-Channel MOSFET, 55V 19A TO-220, AEC-Q101

MPNAUIRF9Z34N-INF
End of Life

Infineon AUIRF9Z34N-INF, Automotive AEC-Q101 HEXFET P-Channel MOSFET, 55 V Vdss, 19 A Id, 100 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

$0.71Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSNot applicable
SeriesAutomotive, AEC-Q101, HEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF9Z34N-INF specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds620 pF @ 25 V

Product details

P-channel power switch for automotive and industrial loads

The Infineon AUIRF9Z34N-INF is an automotive-grade P-channel HEXFET MOSFET in a TO-220-3 through-hole package. The device is qualified to AEC-Q101, making it suitable for under-hood automotive electronics, industrial motor drives, battery management, and power distribution where a high-side P-channel switch simplifies the gate-drive circuit.

Thermal and switching margins

Gate-drive and threshold considerations

Input capacitance is 620 pF at 25 V drain-source, so the gate-drive source impedance should be low enough to avoid slow turn-on edges that push switching loss higher.

Frequently asked questions

Is AUIRF9Z34N-INF compatible with IRF9Z34N?

The AUIRF9Z34N-INF is the automotive AEC-Q101 qualified version of the standard IRF9Z34N. Both are P-channel 55 V, 19 A MOSFETs in TO-220 with similar Rds(on) and gate charge. The AUIRF9Z34N-INF adds the AEC-Q101 automotive reliability screening and is typically used in automotive and high-reliability applications. Pin-compatible for a drop-in replacement, but the automotive-grade part carries a higher temperature rating and qualification level.

What is the Rds(on) of AUIRF9Z34N-INF at 10V?

The maximum on-resistance is 100 mOhm at a gate-source voltage of 10 V and a drain current of 10 A. This is the rated condition for the Rds(on) specification.

Is AUIRF9Z34N-INF lead-free?

The AUIRF9Z34N-INF is part of Infineon's automotive HEXFET series, which is RoHS-compliant and lead-free. The device is suitable for lead-free soldering processes.