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Infineon Technologies AUIRF8739L2TR
Infineon Technologies

AUIRF8739L2TR MOSFET N-CH 40V 57A DirectFET, 0.6 mOhm

MPNAUIRF8739L2TR
End of Life

Infineon HEXFET® series, AUIRF8739L2TR, N-Channel MOSFET, 40 V Vdss, 545 A (Tc) continuous drain, 0.6 mOhm Rds(on) at 10 V, DirectFET™ Isometric L8 package, -55 to 175 °C.

$7.42Ref. price · indicative, final on quote
AUIRF8739L2TR datasheet
PackagingDirectFET™ Isometric L8
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRF8739L2TR Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C57A (Ta), 545A (Tc)
Power dissipation3.8W (Ta), 340W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs40V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric L8
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs0.6mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs562 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17890 pF @ 25 V

Product details

What this part is and where it fits

The Infineon AUIRF8739L2TR is an N-channel MOSFET from the HEXFET® series, built on a metal-oxide semiconductor process. It handles a 40 V drain-to-source voltage and delivers a continuous drain current of 57 A at ambient temperature, or 545 A when the case is held at 25 °C. The on-resistance sits at 0.6 mOhm typical with a 10 V gate drive. The DirectFET™ Isometric L8 package is a surface-mount can with a low-inductance, low-thermal-resistance footprint.

Ratings that drive the BOM decision

The 0.6 mOhm Rds(on) at 10 V gate drive keeps conduction losses low at high current. The 562 nC gate charge and 17890 pF input capacitance at 25 V drain set the gate-drive requirement.

Frequently asked questions

What replaces AUIRF8739L2TR or is there an equivalent?

No official replacement or second-source is listed for this part. The IPD50R950CEAUMA1 is a 500 V, 950 mOhm CoolMOS™ device — it is not a functional equivalent for a 40 V, 0.6 mOhm FET.