Infineon HEXFET series, AUIRF7769L2TR, N-Channel MOSFET, 100 V drain-source, 375 A continuous drain, 3.5 mOhm Rds(on) at 74 A, 10 V gate drive, DirectFET Isometric L8 package, surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 375A (Tc) |
| Power dissipation | 3.3W (Ta), 125W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DirectFET™ Isometric L8 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 74A, 10V |
| Gate charge (Qg) (Max) @ vgs | 300 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11560 pF @ 25 V |
The AUIRF7769L2TR: Total gate charge is 300 nC at 10 V, with an input capacitance of 11560 pF at 25 V drain-source.
Maximum power dissipation is 125 W at the case, dropping to 3.3 W in still air at 25 °C ambient. Junction temperature range is -55 °C to 175 °C.
Maximum on-resistance is 3.5 mOhm at 74 A drain current with 10 V gate drive. This is the conduction-loss figure to use for thermal and efficiency calculations at rated current.