Skip to main content
Log in
Infineon Technologies AUIRF7736M2TR

AUIRF7736M2TR N-Channel MOSFET, 40V, 108A

MPNAUIRF7736M2TR
End of Life

Infineon HEXFET® series, N-Channel MOSFET, 40 V Drain to Source Voltage, 108 A Continuous Drain Current, 3 mOhm Rds(on) at 65 A and 10 V, DirectFET™ Isometric M4 package, Surface Mount, -55°C to 175°C operating temperature.

$3.51Ref. price · indicative, final on quote
Infineon Technologies AUIRF7736M2TR datasheet (PDF)
PackagingDirectFET™ Isometric M4
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AUIRF7736M2TR specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Ta), 108A (Tc)
Power dissipation2.5W (Ta), 63W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric M4
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs3mOhm @ 65A, 10V
Gate charge (Qg) (Max) @ vgs108 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4267 pF @ 25 V

Product details

40 V, 108 A N-channel HEXFET® in a DirectFET Isometric M4 package

The Infineon AUIRF7736M2TR is a 40 V N-channel MOSFET from the HEXFET® series, built on a metal-oxide trench process. It delivers a continuous drain current of 108 A at the case (Tc) and 22 A at ambient (Ta), with a maximum Rds(on) of 3 mOhm at 65 A and 10 V gate drive.

The DirectFET package is a proprietary Infineon footprint — no direct pin-compatible second source exists in the ledger, so dual-sourcing would require a board redesign if a second source is needed.

Mounting and thermal handling for the DirectFET package

The DirectFET Isometric M4 is a can-style package with solderable pads on the bottom and a exposed metal top. Reflow solder per the recommended land pattern; the datasheet covers the stencil aperture and paste volume. The top-side clip can be heatsunk or left exposed for convective cooling. The 2.5 W dissipation at ambient (Ta) assumes no heatsink; the 63 W at the case (Tc) requires a thermal path through the PCB or an external heatsink attached to the can.

Frequently asked questions

What is the Rds(on) of AUIRF7736M2TR?

The maximum Rds(on) is 3 mOhm at a drain current of 65 A and a gate-source voltage of 10 V.

Is AUIRF7736M2TR RoHS compliant?

Yes, it is ROHS3 compliant.

What is the pinout of AUIRF7736M2TR?

The DirectFET Isometric M4 package has a bottom-side solderable footprint with the drain pad as the large can tab and separate gate and source pads. Refer to the Infineon DirectFET application note for the exact land pattern and pin assignment.

How to solder DirectFET AUIRF7736M2TR?

Use a reflow profile compatible with lead-free solder. The package has a solderable bottom and a metal top; the recommended stencil aperture and paste volume are detailed in the Infineon DirectFET mounting guidelines. No through-hole or hand-soldering is specified.