40 V, 108 A N-channel HEXFET® in a DirectFET Isometric M4 package
The Infineon AUIRF7736M2TR is a 40 V N-channel MOSFET from the HEXFET® series, built on a metal-oxide trench process. It delivers a continuous drain current of 108 A at the case (Tc) and 22 A at ambient (Ta), with a maximum Rds(on) of 3 mOhm at 65 A and 10 V gate drive. The part is housed in a DirectFET™ Isometric M4 package — a surface-mount, solderable-can design that pulls heat through the board and the top-side clip, making it a fit for compact power stages in motor drives, battery switches, and DC-DC converters where board area and thermal management are tight.
Active lifecycle and ROHS3 compliance
The AUIRF7736M2TR is listed as Active in production with ROHS3 compliance. No last-time-buy or obsolescence notice is on record. The DirectFET package is a proprietary Infineon footprint — no direct pin-compatible second source exists in the ledger, so dual-sourcing would require a board redesign if a second source is needed. For now, the part is available through independent distribution, sourced and quoted to order against an RFQ.
Mounting and thermal handling for the DirectFET package
The DirectFET Isometric M4 is a can-style package with solderable pads on the bottom and a exposed metal top. Reflow solder per the recommended land pattern; the datasheet covers the stencil aperture and paste volume. The top-side clip can be heatsunk or left exposed for convective cooling. The operating junction temperature range of -55°C to 175°C covers automotive under-hood and industrial environments. The 2.5 W dissipation at ambient (Ta) assumes no heatsink; the 63 W at the case (Tc) requires a thermal path through the PCB or an external heatsink attached to the can.