AUIRF7640S2TR

Infineon Technologies · HEXFET® Series

Infineon HEXFET® AUIRF7640S2TR, N-Channel MOSFET, 60 V Vdss, 5.8 A (Ta) / 21 A (Tc), 36 mOhm Rds(on) at 10 V, DirectFET™ Isometric SB package, -55°C to 175°C junction temperature.

Infineon Technologies AUIRF7640S2TR
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[IN STOCK] In Stock: 24 pcs
$4.34/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AUIRF7640S2TR specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.8A (Ta), 21A (Tc)
Power dissipation2.4W (Ta), 30W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric SB
Vgs(th) (Max) @ id5V @ 25µA
Rds on (Max) @ id, vgs36mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 25 V

Technical details

60 V N-channel in a DirectFET Isometric SB package

The Infineon AUIRF7640S2TR is a 60 V N-channel MOSFET from the HEXFET® family, housed in a DirectFET™ Isometric SB surface-mount package. It delivers a continuous drain current of 5.8 A at 25°C ambient and 21 A when the case is held at 25°C, with a maximum on-resistance of 36 mOhm at a 10 V gate drive.

The DirectFET Isometric SB package is a low-inductance, solderable can that sits directly on the PCB, using the board as the heatsink. The supplier device package is DIRECTFET SB. This is a surface-mount part; the large drain pad on the bottom of the can requires a good thermal via pattern to the inner copper planes to reach the 30 W case-rated power dissipation. The 2.4 W ambient rating is the practical limit without a heatsink or forced airflow.

Gate threshold voltage maximum is 5 V at 25 µA drain current; recommended drive voltage for rated on-resistance is 10 V.

AUIRF7640S2TR
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