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Infineon Technologies AUIRF7640S2TR

AUIRF7640S2TR N-Channel MOSFET, 60 V, 5.8 A, DirectFET SB

MPNAUIRF7640S2TR
End of Life

Infineon HEXFET® AUIRF7640S2TR, N-Channel MOSFET, 60 V Vdss, 5.8 A (Ta) / 21 A (Tc), 36 mOhm Rds(on) at 10 V, DirectFET™ Isometric SB package, -55°C to 175°C junction temperature.

$1.67Ref. price · indicative, final on quote
PackagingDirectFET™ Isometric SB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRF7640S2TR Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.8A (Ta), 21A (Tc)
Power dissipation2.4W (Ta), 30W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseDirectFET™ Isometric SB
Vgs(th) (Max) @ id5V @ 25µA
Rds on (Max) @ id, vgs36mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 25 V

Product details

60 V N-channel in a DirectFET Isometric SB package

The Infineon AUIRF7640S2TR is a 60 V N-channel MOSFET from the HEXFET® family, housed in a DirectFET™ Isometric SB surface-mount package. It delivers a continuous drain current of 5.8 A at 25°C ambient and 21 A when the case is held at 25°C, with a maximum on-resistance of 36 mOhm at a 10 V gate drive. The 11 nC typical gate charge at 10 V keeps switching losses manageable in medium-frequency converters. Rated for a junction temperature range of -55°C to 175°C, it suits automotive under-hood and industrial environments where thermal cycling is severe.

Package and mounting

The DirectFET Isometric SB package is a low-inductance, solderable can that sits directly on the PCB, using the board as the heatsink. The supplier device package is DIRECTFET SB. This is a surface-mount part; the large drain pad on the bottom of the can requires a good thermal via pattern to the inner copper planes to reach the 30 W case-rated power dissipation. The 2.4 W ambient rating is the practical limit without a heatsink or forced airflow.

Gate drive and switching

Gate threshold voltage maximum is 5 V at 25 µA drain current; recommended drive voltage for rated on-resistance is 10 V.

Frequently asked questions

What is the AUIRF7640S2TR equivalent or cross reference?

The IPD50R950CEAUMA1 is a 500 V CoolMOS CE device with 950 mOhm on-resistance and 4.3 A current rating — it is not a functional equivalent to the 60 V, 36 mOhm AUIRF7640S2TR. No direct pin-compatible second source is listed.

Does AUIRF7640S2TR have a tape and reel option?

Yes, the AUIRF7640S2TR is supplied in Tape & Reel (TR) packaging. Cut Tape (CT) quantities may also be available.

Is AUIRF7640S2TR suitable for automotive applications?

The junction temperature range of -55°C to 175°C and the 60 V drain-source rating are consistent with automotive under-hood requirements. The part does not carry an explicit AEC-Q101 qualification in the listing, so verify with the manufacturer for formal automotive-grade approval.