AUIRF7313QTR

Infineon Technologies · HEXFET® Series

Infineon HEXFET® AUIRF7313QTR, dual N-channel MOSFET, 30V Vdss, 6.9A continuous drain, 29mOhm Rds(on) at 10V, logic-level gate, -55°C to 175°C, 8-SOIC package.

AUIRF7313QTR
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[IN STOCK] In Stock: 10 pcs
$7.29/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

AUIRF7313QTR specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.9A
Power - max2.4W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6.9A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V
Input capacitance (Ciss) (Max) @ vds755pF @ 25V

Technical details

Dual 30 V N-channel in an 8-SOIC — load-switch and driver workhorse

The Infineon AUIRF7313QTR is a dual N-channel HEXFET MOSFET in an 8-SOIC package, rated for 30 V drain-source and 6.9 A continuous drain current per channel at 25°C case temperature.

175°C junction — military-temperature headroom

The 755 pF input capacitance at 25 V drain bias and 33 nC total gate charge at 10 V are moderate — a typical MCU GPIO or low-side driver can switch it at tens of kHz without excessive drive current, though the gate-drive loop should be kept tight to avoid ringing.

AUIRF7313QTR
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