100 V, 59 A N-channel HEXFET in D2PAK
It is designed for high-efficiency switching in motor drives, DC-DC converters, battery management, and power-supply stages where low on-resistance and fast switching are required. A gate charge of 120 nC at 10 V Vgs gives a clear figure for gate-driver sizing and switching-loss estimation — relevant for designs pushing into the tens of kilohertz.
This removes obsolescence risk for production programs currently qualifying the part.
For buyers filling a BOM line, the 100 V drain-source rating and 59 A continuous drain current define the safe operating area for motor-drive and power-conversion stages. The D2PAK surface-mount package suits automated assembly on standard PCB footprints.