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Infineon Technologies AUIRF2903Z — Discrete Semiconductors

AUIRF2903Z N-Channel MOSFET, 30V, 160A, TO-220AB

MPNAUIRF2903Z
Active

Infineon HEXFET series AUIRF2903Z, N-Channel MOSFET, 30 V drain-source, 160 A continuous drain current, 2.4 mOhm Rds(on) at 75 A, 10 V gate drive, TO-220AB through-hole package, -55°C to 175°C junction temperature.

$1.93Ref. price · indicative, final on quote
Infineon Technologies AUIRF2903Z datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF2903Z specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power290.0
Package_typeBulk
Capacitance_uf0.0063
StatusActive
Supply voltage30.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current160.0
Rds on (Max) @ id, vgs2.4mOhm @ 75 A, 10 V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V

Product details

HEXFET N-channel for high-current switching

The Infineon AUIRF2903Z is a 30 V, 160 A N-channel HEXFET MOSFET in a TO-220AB through-hole package, designed for low on-resistance switching in power conversion and motor drive circuits.

Thermal and environment envelope

The 290 W power dissipation rating is the absolute maximum under ideal heatsinking; real-world continuous dissipation depends on the heatsink thermal resistance and airflow, so size the heatsink for the actual switching losses.

Gate drive and threshold

Maximum gate-source voltage is ±20 V.

Frequently asked questions

Where can I buy AUIRF2903Z?

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