Infineon AUIRF2804L, HEXFET series, N-Channel MOSFET, 40 V Vdss, 195 A Id, 2 mOhm Rds(on) at 10 V, TO-262-3 (I²Pak) through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 240 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6450 pF @ 25 V |
The 2 mOhm maximum on-resistance at 75 A and 10 V gate drive keeps conduction losses low enough that a properly sized heatsink can handle the 300 W dissipation budget. The TO-262 (I²Pak) through-hole package with long leads suits designs where a robust mechanical mount is preferred over surface-mount, or where the PCB needs to be isolated from the tab voltage via a separate heatsink pad.
ROHS3 compliance is confirmed, which simplifies EU and RoHS-regulated markets.
The maximum on-resistance is 2 mOhm at 75 A drain current with a 10 V gate drive.
No — the product status is active. There is no end-of-life notice or last-time-buy schedule in effect.
Yes, it is ROHS3 compliant.
The AUIRF2804L is the lead-free, ROHS3-compliant evolution of the IRF2804. It shares the same 40 V / 195 A rating and TO-262 footprint, so it is a direct drop-in replacement in most designs — verify the gate-drive voltage and switching frequency against your layout, as the gate charge is identical at 240 nC.