What the AUIRF2804L is and where it fits
The Infineon AUIRF2804L is an N-channel enhancement-mode MOSFET from the HEXFET series, built on planar trench technology. It is rated for 40 V drain-source breakdown and delivers 195 A continuous drain current at 25°C case temperature — a combination that puts it in the high-current, low-voltage switching class for applications like battery isolation, alternator rectification, DC motor drives, and high-power DC-DC converters in automotive and industrial power trains. The 2 mOhm maximum on-resistance at 75 A and 10 V gate drive keeps conduction losses low enough that a properly sized heatsink can handle the 300 W dissipation budget. The 240 nC gate charge at 10 V is moderate for this current class — a gate-driver capable of sourcing a few amps peak will keep switching edges clean. The TO-262 (I²Pak) through-hole package with long leads suits designs where a robust mechanical mount is preferred over surface-mount, or where the PCB needs to be isolated from the tab voltage via a separate heatsink pad. The junction temperature range of -55°C to 175°C covers under-hood automotive and industrial motor-drive environments without derating concerns at the high end.
2 mOhm Rds(on) — what it means for the BOM
The 2 mOhm on-resistance at 75 A and 10 V gate drive is the number that decides whether this part fits a high-current path.
Lifecycle and compliance
The AUIRF2804L carries an active product status — no end-of-life notice, no last-time-buy window. ROHS3 compliance is confirmed, which simplifies EU and RoHS-regulated markets.