55 V, 150 A automotive-grade N-channel MOSFET
The Infineon AUIRF1405ZL-308 is an automotive-qualified N-channel HEXFET power MOSFET rated for 55 V drain-source and 150 A switching current. It is built on the HEXFET trench technology and carries AEC-Q101 qualification, making it suited for under-hood automotive loads such as electric power steering, DC-DC converters, and motor-drive pre-drive stages where junction temperatures can reach 175 °C. The 4.9 mOhm maximum on-resistance at 75 A and 10 V gate drive keeps conduction losses low in high-current paths.
Rds(on) and gate charge — what they mean for the switching loop
The 4.9 mOhm Rds(on) is specified at 75 A with 10 V gate drive — that is the operating point where the MOSFET is fully enhanced. The 180 nC total gate charge at 10 V means the gate driver must supply 180 nC per switching cycle.
175 °C junction — where it matters
Rated for -55 °C to 175 °C junction temperature, this part handles the thermal cycling of engine-bay environments and high-ambient industrial enclosures. The 175 °C Tj max is the absolute limit for the silicon.
Lifecycle and sourcing
Listed as Active by the manufacturer, so there is no imminent last-time-buy or EOL risk. For current pricing and lead time, submit an RFQ — availability and price are confirmed at quote time.