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Infineon Technologies AUIRF1405ZL-308 — Discrete Semiconductors

AUIRF1405ZL-308 N-Channel MOSFET, 55V 150A, 4.9mOhm

MPNAUIRF1405ZL-308
Active

Infineon AUIRF1405ZL-308, Automotive AEC-Q101 HEXFET N-Channel MOSFET, 55 V, 150 A switching current, 4.9 mOhm Rds(on) at 75 A, 180 nC gate charge, Through Hole, Bulk.

$1.49Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

AUIRF1405ZL-308 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, HEXFET®
FET typeN-Channel
MountingThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power230.0
Package_typeBulk
Capacitance_uf0.0048
StatusActive
Supply voltage55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching current150.0
Rds on (Max) @ id, vgs4.9mOhm @ 75 A, 10 V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V

Product details

55 V, 150 A automotive-grade N-channel MOSFET

The Infineon AUIRF1405ZL-308 is an automotive-qualified N-channel HEXFET power MOSFET rated for 55 V drain-source and 150 A switching current. It is built on the HEXFET trench technology and carries AEC-Q101 qualification, making it suited for under-hood automotive loads such as electric power steering, DC-DC converters, and motor-drive pre-drive stages where junction temperatures can reach 175 °C.

175 °C junction — where it matters

The 175 °C Tj max is the absolute limit for the silicon.

Listed as Active by the manufacturer, so there is no imminent last-time-buy or EOL risk.

Frequently asked questions

Is AUIRF1405ZL-308 AEC-Q101 qualified?

Yes, the AUIRF1405ZL-308 is AEC-Q101 qualified and belongs to the Automotive HEXFET series, making it suitable for automotive-grade applications requiring the AEC-Q101 stress test qualification.

What is the Rds(on) of AUIRF1405ZL-308?

The maximum Rds(on) is 4.9 mOhm at 75 A drain current with 10 V gate-to-source voltage. That is the on-resistance at the rated operating point — conduction loss scales linearly with current squared.

What is the gate charge of AUIRF1405ZL-308?

The total gate charge (Qg) is 180 nC at 10 V gate drive. This figure determines the gate-drive energy per switching cycle and is used to size the gate-driver output stage and estimate switching losses.