Infineon HEXFET® N-Channel Power MOSFET, AUIRF1405ZL, 55 V drain, 150 A switching, 4.9 mOhm Rds(on), TO-262 through-hole package, bulk.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 230.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0048 |
| Status | Active |
| Supply voltage | 55.0 |
| Vgs(Th) (Max) @ id | 4 V @ 250µA |
| Switching current | 150.0 |
| Rds on (Max) @ id, vgs | 4.9mOhm @ 75 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
The AUIRF1405ZL is an N-channel HEXFET power MOSFET in a TO-262 through-hole package, rated for 55 V drain-source voltage and 150 A continuous switching current.
Gate-source voltage is clamped at ±20 V, so a standard 12 V or 15 V gate-drive rail works without external zener clamps. Junction temperature range spans -55°C to 175°C, covering both cold-start and under-hood thermal profiles.
It is supplied in a TO-262 through-hole package, bulk packaging. The three-lead tabbed package suits high-current power stages where a heatsink is mounted to the tab.