Infineon Technologies AUIRF1405-INF — Discrete Semiconductors
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Infineon Technologies / Discrete Semiconductors

Infineon AUIRF1405-INF N-Channel HEXFET MOSFET

MPN AUIRF1405-INF
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon HEXFET® series, N-Channel MOSFET, Through Hole, TO-220-3, 55 V Drain-Source, 75 A Continuous Drain, 5.3 mOhm Rds(on) at 101 A, -55°C to 175°C Junction.

In Stock: 22,100 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.72 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.72
10+ pcs
$1.55
30+ pcs
$1.41
100+ pcs
$1.27
500+ pcs
$1.19
1,000+ pcs
$1.12
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$1.72 / ea

22,100 in stock — maximum per order · 3–4 days lead time

$1.55 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case TO-220-3
Output / Current 55 V

Full Technical Specifications

15 Parameters
AUIRF1405-INF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.3mOhm @ 101A, 10V
Gate charge (Qg) (Max) @ vgs260 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5480 pF @ 25 V
Series Sibling Variants

Infineon Technologies HEXFET® Series Models

Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

What this HEXFET does in the circuit

The Infineon AUIRF1405-INF is an automotive-qualified N-channel HEXFET power MOSFET in a TO-220AB through-hole package.

5.3 mOhm Rds(on) — what it means for conduction losses

At 75 A continuous, the I²R loss is under 30 W, which the 330 W package dissipation ceiling handles with a properly heatsinked TO-220. The gate charge of 260 nC at 10 V means the gate driver must deliver a 2.6 µC pulse to switch the device; a standard automotive gate-driver IC with 2 A peak source will turn it on in roughly 130 ns.

Automotive temperature grade and construction

The HEXFET stripe-cell architecture keeps the Rds(on) positive-temperature-coefficient characteristic, which helps parallel operation and prevents thermal runaway at high current. The TO-220AB package is a standard through-hole power package, compatible with existing heatsink clips and PCB layouts for 75 A-class designs.

No last-time-buy or phase-out risk is indicated for this order code.

Frequently asked questions

Is AUIRF1405-INF RoHS compliant?

Yes, the AUIRF1405-INF is ROHS3 compliant, meeting the latest EU RoHS directive requirements.

Can AUIRF1405-INF replace IRF1405?

The AUIRF1405-INF is the automotive-qualified version of the standard IRF1405, sharing the same TO-220AB package and similar 55 V / 75 A ratings. It is a direct drop-in replacement for applications requiring AEC-Q101 qualification, with the same pinout and electrical characteristics.

AUIRF1405-INF
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