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Infineon Technologies AUIRF1405-INF — Logic ICs

Infineon AUIRF1405-INF N-Channel HEXFET MOSFET

MPNAUIRF1405-INF
End of Life

Infineon HEXFET® series, N-Channel MOSFET, Through Hole, TO-220-3, 55 V Drain-Source, 75 A Continuous Drain, 5.3 mOhm Rds(on) at 101 A, -55°C to 175°C Junction.

$1.72Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

AUIRF1405-INF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.3mOhm @ 101A, 10V
Gate charge (Qg) (Max) @ vgs260 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5480 pF @ 25 V

Product details

What this HEXFET does in the circuit

The Infineon AUIRF1405-INF is an automotive-qualified N-channel HEXFET power MOSFET in a TO-220AB through-hole package. It is designed for high-current switching in 12 V and 24 V automotive systems—motor drives, DC-DC converters, battery isolation, and solenoid drivers—where its 55 V drain-source breakdown and 75 A continuous drain rating provide the headroom for transient-rich environments like engine bays and chassis-mounted controllers.

5.3 mOhm Rds(on) — what it means for conduction losses

At 75 A continuous, the I²R loss is under 30 W, which the 330 W package dissipation ceiling handles with a properly heatsinked TO-220. The gate charge of 260 nC at 10 V means the gate driver must deliver a 2.6 µC pulse to switch the device; a standard automotive gate-driver IC with 2 A peak source will turn it on in roughly 130 ns.

Automotive temperature grade and construction

The HEXFET stripe-cell architecture keeps the Rds(on) positive-temperature-coefficient characteristic, which helps parallel operation and prevents thermal runaway at high current. The TO-220AB package is a standard through-hole power package, compatible with existing heatsink clips and PCB layouts for 75 A-class designs.

Lifecycle and sourcing posture

No last-time-buy or phase-out risk is indicated for this order code.

Frequently asked questions

Is AUIRF1405-INF RoHS compliant?

Yes, the AUIRF1405-INF is ROHS3 compliant, meeting the latest EU RoHS directive requirements.

Can AUIRF1405-INF replace IRF1405?

The AUIRF1405-INF is the automotive-qualified version of the standard IRF1405, sharing the same TO-220AB package and similar 55 V / 75 A ratings. It is a direct drop-in replacement for applications requiring AEC-Q101 qualification, with the same pinout and electrical characteristics.