Infineon HEXFET® series AUIRF1405, N-Channel MOSFET, 55 V drain-source, 75 A continuous drain current, 5.3 mOhm max Rds(on) at 10 V gate drive, TO-220AB through-hole package, -55°C to 175°C junction temperature range.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Operating temperature high | -55°C to 175°C(TJ) |
| Vgs | ±20 V |
| Power | 330.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.0055 |
| Status | Active |
| Supply voltage | 55.0 |
| Vgs(Th) (Max) @ id | 4 V @ 250µA |
| Switching current | 75.0 |
| Rds on (Max) @ id, vgs | 5.3mOhm @ 101 A, 10 V |
| Gate charge (Qg) (Max) @ vgs | 260 nC @ 10 V |
The Infineon AUIRF1405 is a HEXFET series N-channel power MOSFET in a TO-220AB through-hole package, rated for 55 V drain-source breakdown and 75 A continuous drain current. It is designed for high-current switching applications where low conduction loss is critical.
Total gate charge is 260 nC at Vgs=10 V.
Total gate charge is 260 nC maximum at Vgs=10 V, which determines the gate driver current required for a given switching frequency.