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Infineon Technologies AUIRF1405 — Discrete Semiconductors
Infineon Technologies

AUIRF1405 N-Channel MOSFET 55V 75A TO-220AB HEXFET

MPNAUIRF1405
Active

Infineon HEXFET® series AUIRF1405, N-Channel MOSFET, 55 V drain-source, 75 A continuous drain current, 5.3 mOhm max Rds(on) at 10 V gate drive, TO-220AB through-hole package, -55°C to 175°C junction temperature range.

$1.72Ref. price · indicative, final on quote
AUIRF1405 datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

AUIRF1405 Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w330.0
Package_typeBulk
Capacitance_uf0.0055
Product_statusActive
Supply_voltage_v55.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching_current_a75.0
Rds on (Max) @ id, vgs5.3mOhm @ 101 A, 10 V
Gate charge (Qg) (Max) @ vgs260 nC @ 10 V

Product details

TO-220AB N-channel power switch for 55 V rails

The Infineon AUIRF1405 is a HEXFET series N-channel power MOSFET in a TO-220AB through-hole package, rated for 55 V drain-source breakdown and 75 A continuous drain current. It is designed for high-current switching applications where low conduction loss is critical.

Gate charge and drive requirements at 10 V

Total gate charge is 260 nC at Vgs=10 V.

Junction temperature envelope and thermal design

Operating junction temperature spans -55°C to 175°C.

Frequently asked questions

What is the gate charge of the AUIRF1405?

Total gate charge is 260 nC maximum at Vgs=10 V, which determines the gate driver current required for a given switching frequency.