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Infineon Technologies AUIRF1404ZS — Discrete Semiconductors
Infineon Technologies

AUIRF1404ZS MOSFET N-Ch 40V 160A D2PAK, 3.7 mOhm Rds(on)

MPNAUIRF1404ZS
Active

Infineon HEXFET® N-Channel MOSFET, AUIRF1404ZS, 40V, 160A, 3.7 mOhm Rds(on) @ 75A/10V, 150 nC gate charge, 200W, D2PAK, Surface Mount.

$1.41Ref. price · indicative, final on quote
AUIRF1404ZS datasheet
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRF1404ZS Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w200.0
Package_typeBulk
Capacitance_uf0.0043
Product_statusActive
Supply_voltage_v40.0
Vgs(Th) (Max) @ id4 V @ 250µA
Switching_current_a160.0
Rds on (Max) @ id, vgs3.7mOhm @ 75 A, 10 V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V

Product details

3.7 mOhm Rds(on) — conduction loss floor for high-current switching

The AUIRF1404ZS is an Infineon HEXFET N-channel MOSFET rated at 40 V drain-source with a continuous drain current of 160 A. The on-resistance is specified at 3.7 mOhm maximum at Vgs=10 V and Id=75 A — this sets the conduction loss floor in a 40 V bus application. With a total gate charge of 150 nC at Vgs=10 V, the driver must supply the required peak current for the switching frequency; lower frequencies relax the drive current proportionally.

175°C junction — under-hood and high-ambient designs

The 200 W power dissipation rating assumes the D2PAK package is soldered to a suitable copper area on the PCB — the thermal resistance to ambient depends on the board's copper pour and airflow, not just the device itself.

Frequently asked questions

What is the Rds(on) of AUIRF1404ZS?

The maximum Rds(on) is 3.7 mOhm at Vgs=10 V and Id=75 A. This value is measured at 25°C junction temperature; on-resistance increases with temperature per the normalised curve in the datasheet.

What is the gate charge of AUIRF1404ZS?

Total gate charge (Qg) is 150 nC at Vgs=10 V. This figure drives the gate-driver peak current requirement — for example, 150 nC switched at 100 kHz needs an average drive current of 15 mA, though peak current during the Miller plateau is higher.

What is the difference between AUIRF1404ZS and AUIRF1404Z?

The 'S' suffix in AUIRF1404ZS indicates the part is supplied in bulk (tube or loose) packaging rather than tape-and-reel. The die, package (D2PAK), and electrical ratings are identical. The AUIRF1404Z is typically offered on tape-and-reel for automated pick-and-place.