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Infineon Technologies AUIRF1404STRL

Infineon AUIRF1404STRL N-Channel MOSFET, 40V 75A D2PAK

MPNAUIRF1404STRL
End of Life

Infineon HEXFET® AUIRF1404STRL, N-Channel MOSFET, 40V Vdss, 75A Id, 4mOhm Rds(on) at 10V, 200nC Qg, D2PAK (TO-263), -55 to 175°C.

$3.1Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AUIRF1404STRL Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation3.8W (Ta), 200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 95A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7360 pF @ 25 V

Product details

What this part is — a low-voltage, high-current N-channel switch

The Infineon AUIRF1404STRL is an N-channel enhancement-mode MOSFET from the HEXFET® series, built on planar stripe technology. It's rated for a 40V drain-source voltage and a continuous drain current of 75A at 25°C case temperature — a part sized for high-current switching in 12V and 24V automotive, industrial, and power-conversion rails. The 4mOhm maximum on-resistance at 95A and 10V gate drive keeps conduction losses low, while the 200nC gate charge at 10V tells you the gate-drive circuit needs to source a solid pulse to switch it fast.

40V Vdss — headroom for 12V/24V rails

A 40V drain-source breakdown gives comfortable derating margin on a 12V or 24V nominal bus. In a 24V system with transients, you've got roughly 16V of headroom before avalanche — enough for most automotive load-dump clamping scenarios. The 75A continuous current is a case-temperature rating; at higher ambient or with restricted heatsinking, derate per the thermal curve.

4mOhm Rds(on) — what it means for the BOM

At 95A and 10V gate drive, the maximum on-resistance is 4mOhm. That translates to roughly 36W conduction loss at full rated current — a number that drives heatsink selection and PCB copper area. The 200nC gate charge means the driver must supply about 2A peak for a 100ns switching transition; undersized gate-drive ICs will stretch the switching edges and increase crossover loss. Pair this part with a driver capable of at least 2A peak source/sink.

Temperature range and environment

Rated for junction temperatures from -55°C to 175°C, this MOSFET suits under-hood automotive, high-ambient industrial enclosures, and military-grade power stages. The D2PAK (TO-263) surface-mount package reflows onto a copper island on the PCB; that tab is the drain, so the PCB layout must account for high-current traces and thermal vias. The part will survive a hot-air rework cycle if you preheat the board — the tab's thermal mass is substantial, so a bottom-side preheater helps lift the part without lifting the pad.

Lifecycle and sourcing

The AUIRF1404STRL has an Active lifecycle status per the manufacturer.

Frequently asked questions

What is the maximum drain current of AUIRF1404STRL?

That's a case-temperature rating, not ambient — derating applies at higher case temperatures.

What is the Rds(on) of AUIRF1404STRL?

Maximum on-resistance is 4mOhm at 95A drain current with 10V gate drive.