Infineon Technologies · HEXFET® Series
Infineon AUIRF1324WL, HEXFET® series, N-Channel MOSFET, 24 Vdss, 240 A continuous drain (Tc), 1.3 mOhm Rds(on) @ 195A, 10V drive, 180 nC gate charge, TO-262-3 wide leads, -55°C to 175°C junction, through-hole mounting.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 24 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 240A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Wide Leads |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.3mOhm @ 195A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7630 pF @ 19 V |
The AUIRF1324WL: N-channel HEXFET power MOSFET rated for 24 V drain-source and 240 A continuous drain current at case temperature. The 1.3 mOhm max on-resistance at 195 A with a 10 V gate drive keeps conduction losses low.
RoHS3 compliant (ROHS3).
