Low-voltage, high-current switch in a TO-262-3 wide-lead package
The AUIRF1324WL: N-channel HEXFET power MOSFET rated for 24 V drain-source and 240 A continuous drain current at case temperature. The 1.3 mOhm max on-resistance at 195 A with a 10 V gate drive keeps conduction losses low.
Gate drive and switching profile
Maximum gate charge is 180 nC at 10 V, and input capacitance measures 7630 pF at 19 V drain-source.
Lifecycle and compliance
RoHS3 compliant (ROHS3). The HEXFET series has broad distribution coverage, so lead time is typically quoted per order; we source and quote against an RFQ with current pricing confirmed at quote time.
