The Infineon AUIRF1010ZL is a 55 V, 75 A N-channel HEXFET power MOSFET in a TO-262 through-hole package. It is built on the HEXFET trench technology and targets high-current switching applications — motor drives, DC-DC converters, battery protection, and automotive load switching where the 175°C junction rating gives headroom over standard 150°C parts.
7.5 mOhm at 10 V — sizing the gate drive and thermal budget
At full rated current that is about 42 W of dissipation in the channel alone, which the 140 W package limit can handle with adequate heatsinking — but the junction-to-case thermal path needs a good interface.
175°C junction — built for under-hood and high-ambient environments
For a 55 V MOSFET, that matters in automotive under-hood or industrial enclosures where ambient can hit 105°C and the junction sees another 50-60°C rise from dissipation. A 150°C-rated part would derate current significantly at those ambients; the 175°C rating keeps the full 75 A capability available across a wider operating window.