Zero trr — the SiC switching advantage
The AIDW30S65C5XKSA1 is an Infineon CoolSiC™ silicon carbide Schottky diode rated at 650 V reverse voltage and 30 A average rectified current. Its defining characteristic is a reverse recovery time of 0 ns — the majority-carrier SiC structure simply has no stored charge to sweep out.
175°C junction — thermal headroom for automotive
The 175°C ceiling is the high end for automotive-grade SiC Schottkys — it covers under-hood ambient plus self-heating at 30 A without derating the voltage rating. Forward voltage is specified at 1.7 V maximum at 30 A and 25°C junction. Conduction loss at full load is 51 W peak; paired with the zero-recovery switching loss, the total dissipation stays within the TO-247-3 package capability when mounted to a proper heatsink.
Automotive qualification and compliance
This part carries the Automotive, AEC-Q100/101 qualification — it is released for production in automotive power train, on-board charger, and DC-DC converter applications. The series designation is CoolSiC™, Infineon's silicon-carbide Schottky technology platform. The part is ROHS3 compliant.
Package and mounting
Supplied in the PG-TO247-3-41 package — a standard TO-247-3 through-hole footprint with three leads. The large copper tab provides a low thermal resistance path to the heatsink. Mounting torque per the datasheet is typically 0.8–1.0 Nm; the package is compatible with existing TO-247 clip or screw-mount hardware.