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Infineon Technologies AIDK08S65C5ATMA1
Infineon Technologies

Infineon AIDK08S65C5ATMA1 SiC Schottky Diode, 650 V 8 A

MPNAIDK08S65C5ATMA1
End of Life

Infineon CoolSiC™ Automotive series, AIDK08S65C5ATMA1 Silicon Carbide Schottky Diode, 650 V reverse voltage, 8 A average rectified current, 0 ns reverse recovery time, -40 to 175 °C junction temperature, surface-mount PG-TO263-2 (D²Pak).

$5.99Ref. price · indicative, final on quote
AIDK08S65C5ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

AIDK08S65C5ATMA1 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101, CoolSiC™
Diode typeSilicon Carbide Schottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 8 A
Current - reverse leakage @ vr50 µA @ 650 V
Current - average rectified8A
Operating temperature - junction-40°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time0 ns

Product details

What this SiC Schottky brings to the power stage

The Infineon AIDK08S65C5ATMA1 is a 650 V, 8 A silicon carbide Schottky diode from the CoolSiC™ Automotive series, qualified to AEC-Q101. Its zero reverse recovery time — no stored charge, no recovery tail — eliminates the switching loss term that dominates in hard-switched PFC, boost, and DC-DC converters. The 175 °C maximum junction temperature gives headroom for under-hood and high-ambient automotive environments where a silicon ultrafast would need aggressive derating or active cooling.

Zero trr — what it means for the switching loop

The 0 ns reverse recovery time eliminates the stored-charge recovery spike that a silicon ultrafast diode would produce in a continuous-conduction-mode PFC stage.

Package and mounting — D²Pak (TO-263) on an automotive-grade footprint

The PG-TO263-2 package (D²Pak, 2 leads plus tab) is a standard surface-mount power package. The large tab is the cathode and carries the main thermal path.

Lifecycle and sourcing

Infineon lists it as current-production in the CoolSiC™ Automotive portfolio. For a BOM line that needs a 650 V, 8 A SiC Schottky with AEC-Q101 qualification, this part is a straight-in spec.

Frequently asked questions

What does 'No Recovery Time > 500mA (Io)' mean in the spec?

It means the diode's reverse recovery time is zero — no stored charge, no recovery tail — at forward currents above 500 mA. This is inherent to the SiC Schottky structure; the diode turns off the instant the voltage reverses, eliminating the switching loss that a silicon ultrafast diode would incur.

What compliance documentation does Infineon provide for this part?

The part is RoHS3 compliant (lead-free, no restricted substances above threshold). Infineon typically provides a RoHS certificate, REACH declaration, and material declaration on request. AEC-Q101 qualification documents are available through the Infineon automotive portal.

What is the closest pin-compatible alternative in the same family?

Within the CoolSiC™ Automotive 650 V family, the higher-current siblings (e.g., 10 A, 12 A) share the same PG-TO263-2 footprint and pinout. For a direct drop-in with the same 8 A rating, Infineon's own portfolio does not list a second-source cross — no pin-compatible alternate from another manufacturer is formally documented. The part is single-sourced to Infineon.