P-Channel high-side switch for 200 V rails
The 2N6847 is a P-Channel HEXFET power MOSFET rated for 200 V drain-source and 2.5 A continuous drain current, in a through-hole TO-220 package. P-channel construction simplifies high-side switching — you drive the gate referenced to the source rail rather than bootstrapping an N-channel part. The 1.725 Ohm maximum Rds(on) at 10 V gate drive sets the conduction loss floor: at 2.5 A the dissipation is roughly 10.8 W, leaving headroom below the 20 W package limit.
Gate drive and switching losses
Total gate charge is 8.4 nC at 10 V, which keeps the drive current modest even at tens of kilohertz — a 100 kHz switch at that Qg draws about 0.84 mA from the driver. The ±20 V Vgs maximum gives margin for gate ringing on long leads, but the 4 V threshold at 250 µA means the gate needs a clean 10 V rail to fully enhance the channel and hit the rated Rds(on).
Thermal and package reality
Junction temperature range is -55°C to 150°C, covering military and industrial environments. The TO-220 tab is the primary heat path — the thermal resistance to case determines whether a heatsink is needed at full load. The through-hole mounting suits point-to-point wiring, perfboard prototypes, and existing TO-220 footprints on legacy layouts.