Infineon EiceDriver™ 2EDN8523FXTMA1 low-side gate driver, 5A peak source/sink, 5.3ns rise / 4.5ns fall, 4.5V–20V supply, inverting input, independent channels, PG-DSO-8 package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | EiceDriver™ |
| Gate type | N-Channel MOSFET |
| Input type | Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 20V |
| Logic voltage - VIL, VIH | 1.2V, 1.9V |
| Current - peak output (Source, sink) | 5A, 5A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Number of drivers | 2 |
| Driven configuration | Low-Side |
| Rise (Fall time) | 5.3ns, 4.5ns |
That edge rate means it can drive the gate capacitance of a large N-channel MOSFET hard enough to keep switching losses low, but it also means the layout needs short, low-inductance loops between the driver output and the MOSFET gate — a 1 cm trace adds enough inductance to ring the gate waveform.
ROHS3 compliant.
This part is available to order through independent distribution.
Each channel delivers 5 A peak source and 5 A peak sink current.
No — this is a low-side driver, not a half-bridge. It drives the low-side MOSFET gate referenced to ground, so no bootstrap diode or capacitor is needed.
Yes.