2EDN7533RXTMA1

Infineon Technologies · EiceDRIVER™ Series

Infineon Technologies EiceDRIVER™ low-side dual MOSFET driver, 2EDN7533RXTMA1, 5A peak output, 4.5-20V supply, 8-TSSOP/8-MSOP package, ROHS3.

Infineon Technologies 2EDN7533RXTMA1
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[IN STOCK] In Stock: 16 pcs
$2.09/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2EDN7533RXTMA1 specifications
Parameter / AttributeSpecification / Value
SeriesEiceDRIVER™
Gate typeN-Channel, P-Channel MOSFET
Input typeInverting
Channel typeIndependent
MountingSurface Mount
Supply voltage4.5V ~ 20V
Logic voltage - VIL, VIH1.4V, 1.9V
Current - peak output (Source, sink)5A, 5A
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-TSSOP, 8-MSOP (0.118\", 3.00mm Width)
Number of drivers2
Driven configurationLow-Side
Rise (Fall time)8.6ns, 6ns

Technical details

5 A peak drive — gate charge handling

The 2EDN7533RXTMA1: Rated for 5 A peak source and 5 A peak sink current, this driver can charge and discharge the gate capacitance of medium-power N-channel and P-channel MOSFETs in hard-switched topologies. The 8.6 ns typical rise time and 6 ns typical fall time keep cross-conduction losses low in DC-DC converters and motor-drive stages switching at several hundred kilohertz.

Package and compliance

Supplied in an 8-TSSOP / 8-MSOP package (PG-TSSOP-8 supplier device package), surface-mount, with Tape & Reel and Cut Tape options. ROHS3 compliant, with no exemption-based restrictions for EU or global RoHS markets.

2EDN7533RXTMA1
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