5A peak, 5.3ns rise — what it means for the switching loop
The Infineon 2EDN7524FXTMA1 is a dual-channel low-side gate driver in the EiceDriver™ family, designed to drive N-channel MOSFETs with a peak output current of 5A source and 5A sink. Typical rise and fall times of 5.3ns and 4.5ns respectively mean the gate charge is delivered fast enough to keep switching losses low in a 100–500 kHz SMPS or motor-drive PWM stage. The 4.5V to 20V supply range lets it run from a 5V bias rail or a 12V gate-drive supply without a separate regulator. Each of the two independent channels is non-inverting, so the input logic follows the output state directly — no inversion to account for in the control loop. The PG-DSO-8-60 package (8-SOIC, 3.90mm width) keeps the layout tight for a dual driver, and the -40°C to 150°C junction temperature rating covers industrial motor drives, server PSUs, and automotive under-hood environments where the ambient can push well past 85°C.
Active production — no LTB clock ticking
ROHS3 compliant per the record. For a BOM line that needs a qualified dual low-side driver, this part is a straightforward design-in without the supply-risk clock that comes with an NRND or obsolete listing.
Package and supply — layout checklist
Surface-mount in the 8-SOIC footprint (PG-DSO-8-60). The 4.5V minimum supply means a 5V bias rail works fine; the 20V ceiling accommodates 12V gate-drive rails common in industrial drives. The 5A peak output drives the gate charge of a single large MOSFET or two smaller paralleled devices — the independent channels can each drive its own FET with separate return paths, which helps keep the gate loop inductance low.