Infineon Technologies
Infineon EiceDriver™ 2EDL8124G3CXTMA1 half-bridge gate driver, 2 independent channels, N-channel MOSFET, 8V~17V supply, 4A source / 5A sink peak, 120V bootstrap, 45ns rise/fall, -40°C~125°C, PG-VDSON-8-4.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 8V ~ 17V |
| High side voltage - max (Bootstrap) | 120 V |
| Current - peak output (Source, sink) | 4A, 5A |
| Operating temperature | -40°C ~ 125°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-VDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 45ns, 45ns |
The Infineon 2EDL8124G3CXTMA1 is a two-channel, half-bridge gate driver for N-channel MOSFETs. It delivers a peak output current of 4 A source and 5 A sink, with a bootstrap supply rail rated to 120 V.
The ROHS3 status covers all six original restricted substances plus the four phthalates — no exemption declarations needed for EU-market equipment.
