Infineon EiceDriver™ 2EDL8124G3CXTMA1 half-bridge gate driver, 2 independent channels, N-channel MOSFET, 8V~17V supply, 4A source / 5A sink peak, 120V bootstrap, 45ns rise/fall, -40°C~125°C, PG-VDSON-8-4.
| Parameter | Value |
|---|---|
| Gate type | N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Voltage | 8V ~ 17V |
| High side voltage - max (Bootstrap) | 120 V |
| Current - peak output (Source, sink) | 4A, 5A |
| Operating temperature | -40°C ~ 125°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 8-VDFN Exposed Pad |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 45ns, 45ns |
The Infineon 2EDL8124G3CXTMA1 is a two-channel, half-bridge gate driver for N-channel MOSFETs. It delivers a peak output current of 4 A source and 5 A sink, with a bootstrap supply rail rated to 120 V.
The ROHS3 status covers all six original restricted substances plus the four phthalates — no exemption declarations needed for EU-market equipment.
No — the lifecycle status is Active. There is no end-of-life notice or last-time-buy schedule. It is suitable for new designs and ongoing production.
Two independent, non-inverting drivers in a half-bridge configuration. One channel drives the high-side N-channel MOSFET, the other drives the low-side.
The 2EDL23N06PJXUMA1 is a peer from the same EiceDriver™ series, also a half-bridge driver with two independent channels. However, it supports both N-channel and P-channel MOSFETs, has a different rise/fall time (48 ns / 37 ns), a 10 V supply, and a higher temperature range (150°C). Verify pin compatibility and bootstrap voltage rating before using it as a drop-in alternate.