Infineon lists the 2EDF9275FXUMA1 as Active.
4 A source, 8 A sink — asymmetric drive for fast turn-off
The 2EDF9275FXUMA1 delivers 4 A peak source and 8 A peak sink. The 2:1 sink-to-source ratio is deliberate: it pulls the gate down harder than it pushes up, which shortens the turn-off delay and reduces the dead-time window needed to prevent shoot-through. In a hard-switched half-bridge, that extra sink current buys margin against cross-conduction at high dV/dt. Rise and fall times are 6.5 ns and 4.5 ns typical. Those sub-10 ns edges mean the gate loop inductance — PCB trace from driver output to MOSFET/IGBT gate — must be kept under 10 nH to avoid ringing that exceeds the gate oxide rating. A tight layout with the driver placed within 10 mm of the power device is the norm.
650 V bootstrap — fits 400 VAC / 600 VDC rails
The high-side bootstrap pin is rated to 650 V maximum. That covers the DC bus of a three-phase motor drive with margin for switching overshoot.
1.65 V VIH — direct 3.3 V logic interface
The input logic-high threshold is 1.65 V. A 3.3 V MCU or DSP output drives it directly — no external level shifter or resistor divider needed. The VIL threshold is not specified in the listing, but the 1.65 V VIH is low enough that 1.8 V logic may also work with sufficient noise margin; bench verification is advised for 1.8 V systems.
Drives IGBT and SiC MOSFET — two independent channels
The gate type covers both IGBT and SiC MOSFET. The two channels are independent and non-inverting, so each channel can be used for the high-side and low-side of a half-bridge. The 20 V supply rail is typical for IGBT gate drive.
16-SOIC (PG-DSO-16-11) — surface-mount, industrial temp
Packaged in a 16-SOIC with body width 3.90 mm, the Infineon PG-DSO-16-11 footprint. ROHS3 compliant.