2ED4820EMXUMA2

Infineon Technologies · EiceDRIVER™ Series

Infineon EiceDRIVER™ 2ED4820EMXUMA2, 48 V smart high-side N-channel MOSFET gate driver, dual independent channels, 20 V ~ 70 V supply, 300 mA source / 1.3 A sink peak output, 24-TSSOP exposed pad PG-TSDSO-24, -40°C ~ 150°C TJ.

Infineon Technologies 2ED4820EMXUMA2
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[IN STOCK] In Stock: 26 pcs
$11.01/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2ED4820EMXUMA2 specifications
Parameter / AttributeSpecification / Value
SeriesEiceDRIVER™
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage20V ~ 70V
Logic voltage - VIL, VIH0.4V, 2.6V
Current - peak output (Source, sink)300mA, 1.3A
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case24-TSSOP (0.154\", 3.90mm Width) Exposed Pad
Number of drivers2
Driven configurationHigh-Side
Rise (Fall time)3µs, 3µs (Max)

Technical details

48 V smart high-side driver — what the supply range means for your rail

The Infineon 2ED4820EMXUMA2 is a dual-channel, high-side N-channel MOSFET gate driver from the EiceDRIVER™ family, designed for 48 V nominal rails. Its 20 V to 70 V supply range covers the full operating envelope of a 48 V automotive or industrial bus, including load-dump transients.

Dual high-side, not half-bridge — topology fit check

Both drivers are configured as high-side switches, driven independently. This suits applications like dual-series N-channel MOSFET load switches in a 48 V power distribution system, or two independent high-side switches in a smart junction box. It is not a half-bridge driver — there is no low-side output, so a half-bridge topology would require a separate low-side driver. The independent channel type means each output has its own logic input and timing; they do not share a common dead-time generator.

300 mA source, 1.3 A sink — the turn-on/turn-off asymmetry

The peak output current is asymmetric: 300 mA source versus 1.3 A sink. This turns the MOSFET off faster than it turns on — a deliberate design for high-side switches where fast turn-off reduces fault energy.

For a BOM line in a 48 V load-switch or smart-distribution design, this part can be committed without sourcing contingency for obsolescence.

2ED4820EMXUMA2
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