2.5 A peak output, 650 V bootstrap — half-bridge gate drive in a 16-SOIC
The Infineon 2ED2110S06MXUMA1 is a high-side and low-side gate driver delivering 2.5 A peak source and sink current, enough to charge and discharge the gate capacitance of medium-power IGBTs and N-channel MOSFETs in a few tens of nanoseconds. The bootstrap supply handles up to 650 V on the high side, covering 400 VDC bus inverters and 230 VAC motor drives with margin for switching transients. Two independent driver channels let it drive a half-bridge leg or two low-side switches from a single 16-SOIC package.
Switching speed and dead-time budgeting
Typical rise time is 25 ns and fall time is 17 ns into the rated load — these edges set the minimum dead-time you need between high-side and low-side turn-on to avoid shoot-through. Operating temperature spans -40°C to 125°C, so the driver sits comfortably inside a motor-drive enclosure or under-hood power stage without derating.
Package and assembly note
Housed in a 16-SOIC wide-body (7.50 mm width) — the 0.295-inch body width matches the standard SOIC-16W footprint, with 1.27 mm pin pitch.