Half-bridge IGBT driver with 1200 V bootstrap headroom
The Infineon 2ED020I12F2XUMA1 is a half-bridge IGBT gate driver from the EiceDriver™ family. Its 1200 V bootstrap rating gives the high-side driver headroom to ride through bus transients. Two independent channels each source and sink 2 A peak. The 13 V to 20 V supply range aligns with standard bias rails; the logic thresholds at 1.5 V and 3.5 V interface directly with PWM controllers.
30 ns rise, 50 ns fall — dead-time budgeting
Rise and fall times of 30 ns and 50 ns set the minimum dead-time window between high-side and low-side turn-on. The 2 A peak output delivers the gate current to hit those edges even with a large IGBT input capacitance.
Junction temperature rating and deployment environment
The -40°C to 150°C junction temperature range covers industrial inverter cabinets and under-hood automotive environments. That 150°C TJ max is the difference between a driver that survives a stalled-motor overcurrent event and one that fails open. The PG-DSO-36-58 package is a 36-pin BSSOP with 7.50 mm width — a standard footprint for multi-channel gate drivers, but verify the pad layout against your PCB land pattern before committing the layout.
Active lifecycle and compliance
ROHS3 compliant. The EiceDriver™ series is Infineon's established IGBT driver platform; documentation and application notes are current.
Sourcing and availability
The Tape & Reel (TR) and Cut Tape (CT) packaging options cover both production reels and prototype quantities.