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Infineon Technologies 1EDS5663HXUMA1 — Discrete Semiconductors

Infineon 1EDS5663HXUMA1 EiceDriver, 5.7kVrms, 4A/8A

MPN1EDS5663HXUMA1
End of Life

Infineon EiceDriver™ single-channel isolated gate driver, 1EDS5663HXUMA1, 5.7kVrms isolation, 4A/8A output, 150V/ns CMTI, 16-SOIC wide-body, active.

$3.14Ref. price · indicative, final on quote
Packaging16-SOIC (0.295", 7.50mm Width)
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1EDS5663HXUMA1 Technical Specifications
ParameterValue
SeriesEiceDriver™
Mounting typeSurface Mount
Voltage - isolation5700Vrms
Voltage - output supply3.13V ~ 3.47V
Current - output high, low4A, 8A
Operating temperature-40°C ~ 85°C
Pulse width distortion18ns (Typ)
Approval agencyCQC, CSA, UL, VDE
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMagnetic Coupling
Case16-SOIC (0.295\", 7.50mm Width)
Number of channels1
Rise (Fall time)6.5ns, 4.5ns
Propagation delay tpLH (tpHL)44ns, 44ns
Common mode transient immunity150V/ns

Product details

5.7 kVrms isolation for motor-drive gate drive

The Infineon 1EDS5663HXUMA1 is a single-channel isolated gate driver from the EiceDriver™ series, using magnetic coupling to deliver 5.7 kVrms galvanic isolation between the input and output sides. That isolation rating covers the reinforced insulation requirements for IGBT and SiC MOSFET gate-drive circuits in motor drives, inverters, and industrial power supplies where the control side must be protected from high-voltage DC-link transients. With 4 A source and 8 A sink peak output current, this driver can charge and discharge the gate capacitance of medium-power IGBTs and SiC MOSFETs quickly enough to keep switching losses under control. The 6.5 ns typical rise time and 4.5 ns fall time mean the gate voltage transitions fast, which reduces the time the device spends in the linear region during switching.

CMTI and propagation delay for dead-time margin

Common-mode transient immunity is specified at a minimum of 150 V/ns — this is the key parameter for motor-drive applications where the output-side ground bounces at high dv/dt during IGBT switching. If the CMTI is too low, the isolator can couple the transient across the barrier and corrupt the gate signal, causing shoot-through. At 150 V/ns, this driver keeps the output state stable even on a fast-switching SiC half-bridge. Propagation delay is matched at 44 ns max for both rising and falling edges, with pulse-width distortion typically 18 ns. Tight delay matching simplifies dead-time calculation in the controller firmware — you can budget a fixed dead-time without worrying about the driver adding asymmetric delay that varies with temperature or supply voltage.

The 1EDS5663HXUMA1 comes in a 16-SOIC wide-body package (PG-DSO-16-30) with a 7.50 mm body width, surface-mount for automated assembly. The output-side supply operates from 3.13 V to 3.47 V — a narrow window that requires a regulated rail, typically from a DC-DC converter or an LDO dedicated to the gate-drive bias.

Regulatory and lifecycle status

The 1EDS5663HXUMA1 carries approvals from CQC, CSA, UL, and VDE — these cover the safety isolation certification needed for equipment sold into North American, European, and Chinese markets. It is also ROHS3 compliant, with no restricted substances under the latest EU directive.

Frequently asked questions

What approvals does the 1EDS5663HXUMA1 carry?

The 1EDS5663HXUMA1 is approved by CQC, CSA, UL, and VDE, and is ROHS3 compliant. These certifications cover safety isolation for equipment sold in North America, Europe, and China.