The 1EDN7550BXTSA1 is supplied in a PG-SOT23-6 package (SOT-23-6), a 6-lead surface-mount footprint with a 0.95 mm pitch typical for this class. The small body — roughly 2.9 mm × 1.6 mm — places the driver close to the MOSFET gate loop, minimising parasitic inductance in the drive path. The exposed die attach pad on the PG variant improves thermal conduction to the board; a thermal via under the pad to the ground plane is recommended for high-frequency switching above 500 kHz.
Peak current and switching speed
Rated for 4 A peak source and 8 A peak sink output current, this driver can charge and discharge the gate capacitance of medium-power N-channel and P-channel MOSFETs quickly. The 6.5 ns typical rise time and 4.5 ns typical fall time (into a specified load) set the switching loss ceiling — faster edges reduce cross-conduction losses in the half-bridge but increase EMI, so the board layout must keep the gate loop inductance below 10 nH to avoid ringing.
Supply rail and bootstrap voltage
The high-side bootstrap pin is rated to 84 V maximum, allowing the driver to float on the switching node of a half-bridge with a DC-link voltage up to 80 V. This makes the part suitable for 48 V bus converters, 60 V motor pre-drives, and 72 V battery-powered systems where the bootstrap diode and capacitor must be sized for the full rail voltage.
Specified for operation from -40°C to 150°C junction temperature, the 1EDN7550BXTSA1 meets the thermal requirements for under-hood automotive electronics and industrial motor drives that see sustained ambient temperatures above 85°C.