4A source / 8A sink peak output in a 6-WDFN package
The Infineon 1EDN7512GXTMA1 is a single-channel low-side gate driver from the EiceDriver™ series, delivering 4 A peak source and 8 A peak sink current to drive N-channel MOSFETs. The asymmetric sink strength pulls the gate down faster than it charges, which reduces the Miller plateau duration during turn-off and lowers switching loss in hard-switched topologies. Rise and fall times are 6.5 ns and 4.5 ns typical respectively, so the driver can switch a moderate gate charge (10–30 nC) in the tens of nanoseconds. The 4.5 V to 20 V supply range covers standard bias rails from 5 V logic to 15 V industrial supplies, and the inverting and non-inverting inputs let the designer match the polarity of the upstream controller without an external inverter.
6-WDFN exposed-pad footprint and thermal routing
Surface-mount assembly follows standard WSON reflow profiles with a peak temperature of 260°C. Tape and Reel (TR) or Cut Tape (CT) packaging options are available for volume or prototype quantities.
Active lifecycle and compliance documentation
ROHS3 compliant per the lifecycle entry, with no halogenated flame retardants or restricted substances above the threshold limits. The part is suitable for EU and global markets requiring RoHS exemption-free compliance.