1.5A peak output — sizing the gate drive for your power stage
The Infineon 1EDN7126GXTMA1 is a dual-channel gate driver in the EiceDRIVER™ family, designed to drive N-Channel MOSFETs in high-side or low-side configurations. Each of the two independent channels delivers 1.5A peak source and 1.5A peak sink current, with typical rise and fall times of 4ns. This combination is sized for medium-power MOSFET gates — think TO-220 or D2PAK parts in switch-mode power supplies, DC-DC converters, and motor-drive pre-drive stages — where you need fast charging of the gate capacitance without excessive ringing. The non-inverting input means a logic-high on the input turns the external MOSFET on, simplifying the control interface from a PWM controller or MCU.
Supply range and temperature grade — where this driver fits
The 4.2V to 11V supply range covers the common bias rails: a 5V or 12V supply works directly, and the lower end down to 4.2V lets it run from a 5V rail with margin for brownout. The operating junction temperature range of -40°C to 125°C qualifies it for industrial environments — factory automation, outdoor telecom rectifiers, and engine-bay-adjacent power stages where ambient heat soaks the PCB. The PG-VSON-10-4 package with exposed pad needs a thermal via stitch under the pad to pull heat into the ground plane; without it, continuous output above 400 mA per channel will push the junction past the 125°C ceiling.
Active lifecycle — no LTB risk for production builds
The 1EDN7126GXTMA1 carries an Active product status and is ROHS3 compliant.