Single-channel isolated gate driver for IGBT and SiC switching
It is designed to drive IGBTs and SiC MOSFETs in power-conversion stages such as motor drives, inverters, and switch-mode power supplies. The output supply range of 13V to 35V covers the typical gate-drive voltages for both IGBTs and SiC devices, while the 10ns typical rise time and 9ns fall time keep switching losses low in hard-switched topologies.
Temperature range and package suitability
The 8-SOIC wide-body package (7.50mm body width, PG-DSO-8-59) provides the creepage distance needed for 2500Vrms isolation and is a common footprint for isolated gate drivers, making PCB layout straightforward.