1ED3125MU12FXUMA1

Infineon Technologies · EiceDriver™ Series

Infineon EiceDriver™ series, 1ED3125MU12FXUMA1, single-channel isolated gate driver, magnetic coupling, 3000 Vrms isolation, 14 A peak output, 4 A sink/source, 30 ns rise/fall, 200 kV/µs CMTI, -40°C to 150°C, PG-DSO-8 package.

Infineon Technologies 1ED3125MU12FXUMA1
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[IN STOCK] In Stock: 201 pcs
$3.98/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1ED3125MU12FXUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesEiceDriver™
MountingSurface Mount
Voltage - isolation3000Vrms
Voltage - output supply10V ~ 35V
Current - peak output14A
Current - output high, low4A, 4A
Operating temperature-40°C ~ 150°C
Pulse width distortion5ns
Approval agencyUL
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMagnetic Coupling
Case8-SOIC (0.154\", 3.90mm Width)
Channels1
Rise (Fall time)30ns, 30ns (Max)
Common mode transient immunity200kV/µs

Technical details

Single-channel isolated gate driver for IGBTs and MOSFETs

The Infineon 1ED3125MU12FXUMA1 is a single-channel isolated gate driver from the EiceDriver™ family, using magnetic coupling to deliver 3000 Vrms galvanic isolation between the input and output. It is designed to drive IGBTs and power MOSFETs in half-bridge and full-bridge topologies, with a peak output current of 14 A that charges the gate capacitance quickly to minimize switching losses. The 4 A sink and 4 A source capability handles moderate-gate-charge devices up to the 150 °C junction temperature limit, making it suitable for motor drives, industrial inverters, and automotive traction inverters where high ambient temperatures are common.

14 A peak output — what it means for switching speed

The 14 A peak output charges the gate capacitance quickly. Compared to the 2 A 1ED020I12BTXUMA1, this driver reduces turn-on time for a given gate charge.

200 kV/µs CMTI — noise immunity in half-bridge switching cells

Common-mode transient immunity of 200 kV/µs (minimum) prevents output glitches during fast switch-node slewing. The 30 ns typical rise/fall time suits IGBTs.

1ED3125MU12FXUMA1
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