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Infineon Technologies 1ED3124MU12HXUMA1 — Discrete Semiconductors
Infineon Technologies

Infineon 1ED3124MU12HXUMA1 EiceDriver™, 14A peak

MPN1ED3124MU12HXUMA1
End of Life

Infineon EiceDriver™ 1ED3124MU12HXUMA1, single-channel isolated gate driver, magnetic coupling, 1200Vrms isolation, 14A peak output, 200kV/µs CMTI, 8-SOIC, -40°C to 125°C.

$3.8Ref. price · indicative, final on quote
1ED3124MU12HXUMA1 datasheet
Packaging8-SOIC (0.295", 7.50mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1ED3124MU12HXUMA1 Technical Specifications
ParameterValue
SeriesEiceDriver™
Mounting typeSurface Mount
Voltage - isolation1200Vrms
Voltage - output supply10V ~ 35V
Current - peak output14A
Current - output high, low5.5A, 5.5A
Operating temperature-40°C ~ 125°C
Approval agencyUL
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMagnetic Coupling
Case8-SOIC (0.295\", 7.50mm Width)
Number of channels1
Rise (Fall time)15ns, 15ns
Common mode transient immunity200kV/µs

Product details

1200Vrms isolation and 200kV/µs CMTI — design margin for high-voltage environments

The 1200Vrms isolation rating covers the reinforced insulation requirement for mains-connected equipment. The magnetic coupling technology provides a galvanic barrier that withstands transient overvoltages. The 200kV/µs CMTI ensures the output does not glitch during fast voltage slewing.

Supply range and temperature grade — fit for industrial environments

The output supply range of 10V to 35V covers the typical gate-drive voltages for IGBTs and SiC MOSFETs. The -40°C to 125°C operating temperature range matches industrial requirements.

Lifecycle and sourcing posture

Infineon lists the 1ED3124MU12HXUMA1 as Active with ROHS3 compliance.

Frequently asked questions

Can 1ED3124MU12HXUMA1 drive IGBT and SiC MOSFETs?

Yes. The 14A peak output and 5.5A source/sink capability, combined with the 10V to 35V supply range, cover the gate-drive voltage and current requirements for medium-power IGBT modules and SiC MOSFETs. The 200kV/µs CMTI ensures stable operation in fast-switching topologies.

What is the equivalent part for 1ED3124MU12HXUMA1?

Within the EiceDriver™ family, the 1EDI60H12AHXUMA1 is a single-channel isolated gate driver with similar isolation (1200Vrms class) and a 10ns/9ns rise/fall time, but it is rated for a 150°C junction temperature versus the 125°C of the 1ED3124MU12HXUMA1. The 1ED3124MU12HXUMA1 offers a higher 14A peak output compared to the 1EDI60H12AHXUMA1's lower peak current — verify the gate charge requirement before substituting.