Infineon EiceDriver™ 1ED3124MU12HXUMA1, single-channel isolated gate driver, magnetic coupling, 1200Vrms isolation, 14A peak output, 200kV/µs CMTI, 8-SOIC, -40°C to 125°C.
| Parameter | Value |
|---|---|
| Series | EiceDriver™ |
| Mounting | Surface Mount |
| Voltage - isolation | 1200Vrms |
| Voltage - output supply | 10V ~ 35V |
| Current - peak output | 14A |
| Current - output high, low | 5.5A, 5.5A |
| Operating temperature | -40°C ~ 125°C |
| Approval agency | UL |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Magnetic Coupling |
| Case | 8-SOIC (0.295\", 7.50mm Width) |
| Channels | 1 |
| Rise (Fall time) | 15ns, 15ns |
| Common mode transient immunity | 200kV/µs |
The 1200Vrms isolation rating covers the reinforced insulation requirement for mains-connected equipment. The magnetic coupling technology provides a galvanic barrier that withstands transient overvoltages. The 200kV/µs CMTI ensures the output does not glitch during fast voltage slewing.
The output supply range of 10V to 35V covers the typical gate-drive voltages for IGBTs and SiC MOSFETs.
Yes. The 14A peak output and 5.5A source/sink capability, combined with the 10V to 35V supply range, cover the gate-drive voltage and current requirements for medium-power IGBT modules and SiC MOSFETs. The 200kV/µs CMTI ensures stable operation in fast-switching topologies.
Within the EiceDriver™ family, the 1EDI60H12AHXUMA1 is a single-channel isolated gate driver with similar isolation (1200Vrms class) and a 10ns/9ns rise/fall time, but it is rated for a 150°C junction temperature versus the 125°C of the 1ED3124MU12HXUMA1. The 1ED3124MU12HXUMA1 offers a higher 14A peak output compared to the 1EDI60H12AHXUMA1's lower peak current — verify the gate charge requirement before substituting.