Goford Semiconductor GT100N12M
MPNGT100N12M
Active
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
$1.12488Price · pay online now
$1.12 / ea
1 in stock — maximum per order · 3–4 days lead time
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3050 pF @ 60 V |