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Goford Semiconductor GT060N04T

Goford Semiconductor GT060N04T

MPNGT060N04T
Active

MOSFET, N-CH, 40V,60A,TO-220

$0.87Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GT060N04T specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1301 pF @ 20 V