Goford Semiconductor GT06 Series

2 variants · Goford Semiconductor

About the Goford Semiconductor GT06 Series

The Goford Semiconductor GT06 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common drain to source voltage of 40 V, drive voltage (Max rds on, min rds on) of 4.5V, 10V and FET type of N-Channel. Variants differ by case, current - continuous drain (Id) @ 25°C and input capacitance (Ciss) (Max) @ vds, so you can match the exact case your application requires using the selection guide below. All listed Goford Semiconductor GT06 Series part numbers are active and orderable.

Select a variant by

Case: TO-220-3 · TO-252-3, DPak (2 Leads + Tab), SC-63
Current - continuous drain (Id) @ 25°C: 54A (Tc) · 60A (Tc)
Input capacitance (Ciss) (Max) @ vds: 1279 pF @ 20 V · 1301 pF @ 20 V
Mounting: Surface Mount · Through Hole
Package: Tape & Reel (TR); Cut Tape (CT) · Tube
Power dissipation: 44W (Tc) · 48W (Tc)
Rds on (Max) @ id, vgs: 5.5mOhm @ 30A, 10V · 6mOhm @ 30A, 10V

Shared specifications

Drain to source voltage: 40 V
Drive voltage (Max rds on, min rds on): 4.5V, 10V
FET type: N-Channel
Gate charge (Qg) (Max) @ vgs: 19 nC @ 10 V
Operating temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Vgs: ±20V
Vgs(th) (Max) @ id: 2.3V @ 250µA

Variant comparison

Parameter	GT060N04T	GT060N04K
Case	TO-220-3	TO-252-3, DPak (2 Leads + Tab), SC-63
Current - continuous drain (Id) @ 25°C	60A (Tc)	54A (Tc)
Input capacitance (Ciss) (Max) @ vds	1301 pF @ 20 V	1279 pF @ 20 V
Mounting	Through Hole	Surface Mount
Package	Tube	Tape & Reel (TR); Cut Tape (CT)
Power dissipation	48W (Tc)	44W (Tc)
Rds on (Max) @ id, vgs	6mOhm @ 30A, 10V	5.5mOhm @ 30A, 10V

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