Goford Semiconductor GT019N04D5
MPNGT019N04D5
Active
N40V,120A,RD<2.8M@10V,VTH1.0V~2.
$0.40164Price · pay online now
$0.40 / ea · total $2.00
5 in stock — maximum per order · MOQ 5 · 3–4 days lead time
Packaging8-PowerTDFN
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.8mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 95 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2840 pF @ 20 V |