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Goford Semiconductor G60N04K

Goford Semiconductor G60N04K

MPNG60N04K
Active

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

$0.27012Price · pay online now
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$0.27 / ea · total $0.54

2 in stock — maximum per order · MOQ 2 · 3–4 days lead time

$0.27 / ea from 5 pcs

PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G60N04K specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C60A
Power dissipation65W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 20 V