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Goford Semiconductor G50N03D5

Goford Semiconductor G50N03D5

MPNG50N03D5
Active

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

$0.34944Price · pay online now
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$0.35 / ea · total $1.75

50 in stock — maximum per order · MOQ 5 · 3–4 days lead time

$0.28 / ea from 50 pcs

Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G50N03D5 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs38.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1784 pF @ 15 V