Goford Semiconductor G3035L
MPNG3035L
Active
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
$0.06036Price · pay online now
$0.06 / ea · total $0.60
35 in stock — maximum per order · MOQ 10 · 3–4 days lead time
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.1A (Ta) |
| Power dissipation | 1.4W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 59mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 650 pF @ 15 V |