G2K3N10G
Goford Semiconductor G2K3N10G
MPNG2K3N10G
Active
N100V, 2.5A,RD<220M@10V,VTH1V~2V
$0.11604Price · pay online now
$0.12 / ea · total $0.60
10 in stock — maximum per order · MOQ 5 · 3–4 days lead time
PackagingTO-243AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Tc) |
| Power dissipation | 1.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-243AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 436 pF @ 50 V |